摘要
本文论述了用扫描电子显微镜研究GaP LPE半导体材料,二次电子像用于分析样品的表面形貌,电子束感生电流像(EBIC)用于显示p-n结的位置,定量EBIC用以确定少子扩散长度和表面复合速度等重要参量。
GaP LPE semiconductor material has been studied in this paper. The surface micrograph is analyzed by second electron (SE) image.The site of p- n junction is displayed by electron beam induced current (EBIC) image. Some important parameters (minority diffusion length, surface recombination parameters) are obtained by quantitative EBIC.
