摘要
分别采用常规和快速热处理在800℃制备了单晶硅太阳电池的铝背场,并利用扩展电阻、X射线衍射和扫描电镜研究了铝背场的载流子浓度分布、铝硅相的组成和表面形貌。载流子浓度分布显示,快速热处理40s就能在硅片表面形成约7μm的背场,达到常规热处理20min的效果。X射线衍射分析和扫描电镜观察发现,快速热处理与常规热处理都能够在硅片背面形成Al_(3.21)Si_(0.47)相,但是快速热处理后形成了致密的铝硅合金,而常规热处理处理后表面依然呈颗粒分布。这些实验结果表明,快速热处理不仅促进铝在硅中的扩散从而能够在很短的时间形成铝背场,而且还能够同时促进铝硅合金化,形成良好的背电极。
Aluminum back surface field （BSF） fabricated by rapid thermal processing or conventional processing was in- vestigated by the means of spreading resistance profile, X-ray diffraction and scanning electron microscope. It was found that BSF with a depth of 7/ma could be formed by rapid thermal processing at 800~C only for 40s, whereas it took about 20 minutes to form BSF with almost the same depth by conventional processing. Moreover, smooth and dense AI-Si alloy was occurred at the silicon surface by rapid thermal processing in spite that the same phase of Al3.21 Si0.47 was formed by the both processing. The results indicate that not only the diffusion of Al atoms in silicon but also the diffusion between the Al particles was enhanced by rapid thermal processing.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2009年第6期784-787,共4页
Acta Energiae Solaris Sinica
基金
浙江省自然科学基金(Y105468)
浙江理工大学人才引进基金(111383A4Y06283)
浙江省科技计划项目(200801031)
关键词
硅
太阳电池
铝背场
快速热处理
silicon
solar cells
aluminum back surface field
rapid thermal processing
