摘要
通过Stille偶联反应合成了5,5″-二辛基-2,2′∶5′2″-三联[3,2-b]并二噻吩,并对该化合物的物理化学性质以及真空蒸镀薄膜的结构和形貌进行了详细表征.以这一化合物作为半导体层、采用顶电极结构制备了有机薄膜晶体管,并对薄膜生长基底温度做了优化,发现基底温度为100℃时器件性能最好,迁移率达到0.13 cm2/V.s,开关比为7×103,阈值电压为-19V.
5,5″-Dioctyl-2,2＇ ： 5＇2″-trithieno [ 3,2-b] thiophene was synthesized by Stille cross-coupling reaction, and its photophysical properties and film morphology were systematically investigated. Organic thin-film transistors with top-contact device structure were fabricated by vacuum deposition, and substrate temperature was optimized. The best device performance was achieved at a substrate temperature of 100 ℃. A hole mobility up to 0.13 cm^2/V·s with an Ion/Ioff current ratio of 7 × 10^3 and a threshold voltage of - 19 V have been demonstrated.
出处
《分子科学学报》
CAS
CSCD
北大核心
2009年第3期153-157,共5页
Journal of Molecular Science
基金
国家自然科学基金资助项目(50833004)
