摘要
采用ＳｎＣｌ４和Ｏ２为反应源，ＡｒＦ准分子激光ＣＶＤ生长ＳｎＯ２薄膜，利用ＸＲＤ、ＵＶＴ、ＸＰＳ研究了薄膜的组成和结构，实验表明ＳｎＯ２薄膜属于四方晶系、金红石结构，薄膜的紫外可见光透射率大于９０％，吸收边波长为３５５ｎｍ，禁带宽度为３．４９ｅＶ。最后。
Abstract ArF excimer laser assisted chemical vapour deposition tin oxide thin films were obtained by using SnCl 4 and O 2 as the precursors. The composition and structure of the thin films were investigated by means of XRD, UVT and XPS. It is shown that the SnO 2 thin films belong to a tetragonal rutile structure. The ultraviolet visible transmittance of the SnO 2 thin films is above 90%. The absorption edge is 355nm and the energy gap is 3 49eV. Reaction mechanism of the SnO 2 thin film is discussed.
