摘要
本文首次报道一种结构简单的１．５５μｍＩｎＧａＡｓＰ／ＩｎＰ部份增益耦合ＤＦＢ激光器与电吸收调制器的单片集成器件．该器件采用脊波导进行横模限制，阈值电流范围为３０～６０ｍＡ，典型边模抑制比大于４０ｄＢ，反向偏压３Ｖ时的消光比为１１ｄＢ．
Abstract We report a simple structure for 1.55μm InGaAsP/InP partially Gain Coupled DFB Laser/Electroabsorption Modulator monolithic integrated device for the first time. Ridge waveguide is adopted for transverse mode confinement. The threshold current of the devices is distributed over a range of 30～60mA, typical side mode suppress ratio is 40dB and on off ratio is 11dB.
基金
国家自然科学基金杰出青年基金
"863"高技术计划
