摘要
在电弧离子镀弧靶上加挡板,分别在挡板屏蔽区内、外用Si(100)和玻璃片作基片沉积出AlN薄膜。用扫描电镜(SEM),X射线衍射仪(XRD),X射线光电子能谱分析仪(XPS)和紫外可见光分光计对AlN薄膜的性能进行了研究。结果表明,在挡板屏蔽区内沉积出的AlN薄膜呈(002)择优取向,无大颗粒污染,在300～1000nm波长范围内透明;在挡板屏蔽区外的AlN薄膜呈(100)择优取向,含有Al污染颗粒,不透明。用电弧离子镀法沉积AlN,样品不需要额外加热就能获得晶态AlN薄膜,样品的温度升高来源于粒子对基底的轰击。
A shield plate was positioned in front of the cathode in arc ion plating apparatus in order to reduce macrodroplet in preparing thin films. Aluminum nitride （AlN） thin films were deposited on Si（100） and glass substrates which located within and out of shield protecting area by reactive vacuum arc deposition method. The characterization of as-deposited films were investigated by scanning electron microscope （SEM）, X-ray diffraction（XRD）, X-ray photoelectron spectroscopy（XPS） and Transmittance spectra. The film deposited within shield protecting area presents no microdroplets but that out of shield protecting area has a large number of microdroplets Within and out of shield protecting area, the AlN shows （002） and （100） orientation respectively. The films without dioplet deposited on glass substrate are transparent in the visual near-infra-red regions. It＇s an easy way to obtain crystalline AlN films at low temperature by arc ion plating method.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2009年第A01期95-98,共4页
Rare Metal Materials and Engineering
基金
广东省自然科学基金资助(04020096)
广州市科技攻关计划项目资助(2006Z3-D0281)
