摘要
介绍一个两级2 W的宽带功率放大器设计,频率范围从700 MHz^1.1 GHz。前级放大器采用MMIC PowerAmplifier HMC481MP86,末级采用飞思卡尔公司的LDMOS场效应晶体管MW6S004N。飞思卡尔公司提供的datasheet中没有包含在设计所要求的频段和功率输出值时相应的输入和输出阻抗值。为了正确匹配,采用ADS的负载牵引法得到LD-MOS场效应晶体管MW6S004N的输入和输出阻抗值,然后使用有耗匹配式放大器的拓扑结构进行实际设计,并使用ADS对设计的放大器进行仿真和优化。
In this paper,a two- tier 2 -W broadband power amplifier design, the frequency range is 700 MHz- 1.1 GHz. The first stage uses MMIC Power Amplifier HMC481,the second stage uses Freescale＇s LDMOSFET MW6S004N. Datasheet is not required in the design to output and input impedance in band and power output values,adopting ADS load -pull method, input and output impedance value of LDMOS field - effect transistor MW6S004N can be gained for correct matching. The use of lossy matching amplifier topology of the structure to carry out the actual design and using ADS on the design of amplifier simulation and optimization.
出处
《现代电子技术》
2009年第11期104-106,共3页
Modern Electronics Technique
