摘要
研究了基于图形几何尺寸修正的电子束光刻的内部邻近效应校正技术,利用累积分布函数预先进行内部最大矩形和顶点矩形的快速计算,并把它们存储在矩阵中。在校正过程中,根据初始矩形的尺寸,通过访问矩阵实现内部最大矩形和顶点矩形的快速替换。矩阵的预先建立,最大限度地减小了校正过程中的计算强度。模拟结果表明,通过内部最大矩形和顶点矩形的替换,能够快速地实现内部邻近效应校正,校正时间与被校正图形数目成线性关系增加。在与同类软件精度相同的情况下,提高了运算速度。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied. The inner maximal rectangles （IMR） and the vertex rectangles （VR） were calculated rapidly by the CDF function in advance, and were saved into the matrix. During the process of the correction, the primitive rectangles were replaced by the IMR and the VR through looking up matrix according to the size of the primitive rectangles. The construction of the matrix in advance minimizes the calculation intensity. The simulation results show that the internal proximity effect correction can be realized rapidly by the replacement of the IMR and the VR, the relationship between the correction time and the number of primitive rectangles is linear. The correction speed is improved, while the correction precision is the same with that of the similar software.
出处
《微纳电子技术》
CAS
北大核心
2009年第5期305-310,共6页
Micronanoelectronic Technology
基金
山东省自然科学基金资助项目(Y2007G21)
关键词
电子束光刻
邻近效应校正
内部最大矩形
顶点矩形
累积分布函数
electron beam lithography
proximity effect correction
inner maximal rectangles
vertex rectangles
cumulative distribution function
