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MOCVD生长的全组分InGaN材料 被引量：2

Study of InGaN Films Grown by MOCVD
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摘要 利用金属有机物化学气相淀积(MOCVD)方法在C面蓝宝石衬底上制备了全组分InGaN薄膜,通过改变生长温度和In/Ga比例成功调控了InGaN合金组分和带隙宽度。利用不同的物理表征手段系统研究了InGaN薄膜的晶体结构和光电学性质,XRD和Hall等测试结果表明:富Ga的InGaN薄膜具有较好的晶体质量,背景电子浓度基本均比富In的InGaN低一个数量级。同时,结合光致发光谱和光学透射谱研究了InGaN合金带隙随In组分的变化关系。 InGaN films were fabricated on the （0001） sapphire substrates at different growth parameters by metal organic chemical vapor deposition （MOCVD）. The In-composition and band-gap of InGaN were successfully controlled by changing growth temperature and In/Ga pro- portion. The crystal structure and optoeleetronic properties of InGaN films were researched by different physical characterization methods. The XRD and Hall measurement results show that the qualities of Ga-rich InGaN films are better than that of In-rich films and the background carrier concentration of Ga-rich InGaN films are one order of magnitude lower than that of In-rich films. Combined with photoluminescence and transmission spectra, the In-composition dependences of InGaN alloy band-gap were studied.
作者 徐峰 吴真龙 邵勇 徐洲 刘启佳 刘斌 谢自力 陈鹏
机构地区 南京大学扬州光电研究院 南京大学物理系江苏省光电信息功能材料重点实验室
出处 《微纳电子技术》 CAS 北大核心 2009年第5期274-278,300,共6页 Micronanoelectronic Technology
基金 南京大学扬州光电研究院研发基金(2008003) 国家重点基础研究发展规划973(2006CB6049) 国家自然科学基金(6039072 60776001 60421003 60676057) 高等学校博士学科点专项科研基金(20050284004) 江苏省自然科学基金项目(BK2005210)
关键词 INGAN X射线衍射 原子力显微镜 X射线光电子能谱 喇曼散射 InGaN X-ray diffraction atomic force microscope X-ray photoelectron spectroscopy Raman scattering
分类号 TN304.055 [电子电信—物理电子学] TN304.23 [电子电信—物理电子学]
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参考文献15

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二级参考文献10

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同被引文献28

  • 1李亮,张荣,谢自力,张禹,修向前,刘成祥,毕朝霞,陈琳,刘斌,俞慧强,韩平,顾书林,施毅,郑有炓.MOCVD生长In_xGa_(1-x)N薄膜的表征[J].人工晶体学报,2005,34(6):1118-1121. 被引量：2
  • 2Martin R W, Edwards P R, O Donnell K P. Cathodolumines- cence spectral mapping of Ⅲ-nit ridest ructures [ J]. Phys. Sta- tus Solidi. A, 2004, 201 : 665.
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  • 4Zhu Lihong, Liu Baolin. Optical properties studies in InGaN/ GaN multiple-quantum well [ J ]. Solid-State Electronics, 2009, 53 : 336.
  • 5Zeimer U, Jahn U, Hoffmann V, Weyers M, Kneissl M. Opti- cal and struetura/ properties of In0.08GaN/In0.02 GaN multiple quantum wells grown at different temperatures and with different indium supplies [ J]. Journal of Electronic Materials, 2010, (39): 6.
  • 6Jahn U, Brandt O, Luna E, Sun X, Wang H, Jiang D S, Bian l F, Yang H. Carrier capture by threading dislocations in InGaN/ GaN heteroepitaxial layers [J]. Physical Review B, 2010, 81 (12).
  • 7Senthil Kumar M, Lee Y S, Park J Y, Chung S J, Hong C H, Sub E K. Surface morphological studies of green InGaN/GaN muhi-quantum wells grown by using MOCVD [ J ]. Materials Chemistry and Physics, 2009, 113 : 192.
  • 8Ting S M, Ramer J C, Florescu D I. Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition [ J ]. Journal of Applied Physics, 2003,94(3) : 1461.
  • 9Yoshikawa M, Murakami M. Characterizing nanometer-sized V- defects in InGaN single quantum well films by high-spatial-resolu- tion cathodoluminescence spectroscopy [J]. Applied Physics Let- ters, 2009, 94(13) : 1908.
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微纳电子技术
2009年 第5期

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