摘要
采用扫描电子显微镜（SEM）、电子能谱仪（EDS）、X射线衍射仪（XRD）对室温时效及125-225℃热处理的电沉积Ag／Sn偶反应区结构及相组成进行分析，研究Ag／Sn界面固相反应的动力学过程。研究表明：在刚电沉积的Ag／Sn偶中发生Ag／Sn界面固相反应，形成Ag3Sn；在室温时效过程中Ag3Sn层生长缓慢，但随着热处理温度的提高（125～200℃），Ag3Sn层生长速率显著提高；Ag／Sn界面固相反应为-扩散控制的反应过程，反应的激活能为70．0kJ／mol。
The microstructures and phases of reaction regions of the electroplated Ag/Sn couples were studied by using SEM, EDS and XRD, after the couples were aged at room temperature and annealed at 125-225 ℃ for various times. The interfacial reaction kinetics of the Ag/Sn couples was also investigated. The results show that in the as-deposited Ag/Sn couple, the reaction between Ag and Sn occurs to form a thin Ag3Sn layer distributed at the Ag/Sn interface. The growth of the Ag3Sn layer is much slow when the couple is aged at room temperature, however, dramatically increases with the annealing temperature （125-200 ℃）. The interfacial reaction of the Ag/Sn couples follows a diffusion-controlled kinetics with activation energy of 70.0 kJ/mol.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2009年第5期930-935,共6页
The Chinese Journal of Nonferrous Metals
关键词
电沉积
电子封装材料
界面反应
反应动力学
electroplation
electronic packaging materials
interfacial reaction
reaction kinetics
