摘要
红外探测器材料是光电子材料的重要一类,近十几年来受到国内外学者的广泛关注和研究。综述美、法等国有关碲镉汞、量子阱制冷型红外探测器材料以及非晶硅、VOx、氧化物晶体、热释电陶瓷等非制冷红外探测器材料的研究现状,对它们各自的特点及发展作了较为详细的评述。可以预测,多色、大规格、异质外延碲镉汞薄膜材料和低成本、高灵敏度非制冷材料是红外探测器材料技术的主要发展方向。
Infrared detector material is one kind of important optoelectronic material which has been widely concerned and studied by domestic and overseas researchers in recent 10 years. This article reviews the present reasearch situation of HgCdTe, Quantum Well cooled infrared detector material and such uncooled infrared detector material as amorphous silicon, VOx, oxide crystal, pyroelectric ceramic in the US and France etc. The characteristics and development of them have been discussed. It is pointed that multi-color, large format, heteroepitaxial HgCdTe thin film material and low cost, high sensitive uneool material will be the development direction of the infrared detector material.
出处
《兵器材料科学与工程》
CAS
CSCD
2009年第3期96-99,共4页
Ordnance Material Science and Engineering
