摘要
通过理论计算,对VDMOS器件的外延层厚度和掺杂浓度进行了优化设计,探讨用于VDMOS的外延工艺,讨论了外延层厚度和过渡区的测试方法,提出了有效外延层厚度是影响击穿电压的最关键参数,应用此参数监控外延工艺,提高了片内及批次间的击穿电压一致性。特别通过对600 V的VDMOS外延参数及其器件结果分析得出,用此参数来调整中间和边缘厚度及不同外延设备之间的参数,使同种参数下有效外延层厚度保持相当,则可以大大减少离散性和设备间变差。
By the theoretical calculation, the thickness and doping concentration of EPI layer for VDMOS were designed. The EPI process, EPI thickness and transition depth of VDMOS were discussed, furthermore it got the conclusion that the effective EPI thickness was the key parameter. Breakdown voltage consistency within wafer and run was improved. Especially by analysis of 600 V EPI parameters and device results, the parameter is used to adjust the thickness within wafer and different reactors, and mate the effective EPI thickness the same, the variation and discreteness in the EPI process could be reduced.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第4期348-350,共3页
Semiconductor Technology
