摘要
详细观察了与沉积条件有关的金刚石形貌变化 ,讨论了直流等离子射流沉积金刚石膜的生长机理 .根据晶体的表面能 ,在碳化物上先生成金刚石八面体晶粒 ,而金刚石最后的生长形状是八面体、立方八面体、立方体还是其中间形式 ,则取决于 ( 111)面和 ( 10 0 )面的相对生长速度 .( 111)面可分解成 ( 110 )面和 ( 10 0面 ) ,有时由于这两个面生长不平衡 ,就在 ( 111)面上出现凹坑或宏观台阶或宏观断裂 .用这个生长机理可以解释金刚石的生长形貌 .
The morphology of diamond film synthesized by DC plasma jet CVD has been observed.It is found that the morphology of the diamond film varies with the variation of depostion conditions.The growth mechanism of the diamond film has been discussed according to the variation of morphologies of diamond.On the basis of the surface energy of the crystal,octahedron diamond is first deposited on carbide surface.But that final shape of diamond is octahedron,cubo- octahedron,cube of inter- shape will be decided by relative growth rate of (1 1 1 ) face and (1 0 0 ) face. (1 1 1 ) face can be resolved into (1 1 0 ) face and (1 0 0 ) face,sometime due to growth non- balance of this two face,pit of macroscopic step of macroscopic crack will occur on (1 1 1 ) face. The growth morphologies of diamond can be explained by this growth mechanism.
出处
《广东有色金属学报》
1998年第1期47-51,共5页
Journal of Guangdong Non-Ferrous Metals
关键词
金刚石膜
直流等离子射流
晶体生长
diamond film,DC plasma jet,carbide substrate,growth mechanism
