摘要
提出了一种光刻胶厚度测量方法,即双光谱法。采用AZ4620正型光刻胶甩胶于平面玻璃基片,以椭偏仪测量的结果为基准。通过双光谱法的测量,检测经过基片的出射光相对入射光强度的变化,达到测量胶厚的目的,结果偏差在2%以内。与传统的膜厚检测方法相比,有计算方法简便,可操作性强等优点。针对光刻胶有曝光的特性,双光谱法更适合于胶厚检测。
A method for measuring the thickness of photoresist, namely two-spectrum method, is proposed. Using AZA620 photoresist throw at plane glass, the measuring thickness of photoresist is benchmark through ellipsometer. Compared with incident lights, the intensity change of emitted lights is examined by means of two spectrum method measuring. The purpose of measuring the thickness of photoresist is achieved. The result deviation is less than 2 percent. Compared with traditional methods for measuring the thickness of film, the new method has the advantages of simple computation and good maneuverability. As photoresist has the exposal characteristics, two-spectrum method is fit for measuring the thickness ofphotoresist.
出处
《光电工程》
CAS
CSCD
北大核心
2009年第5期52-55,共4页
Opto-Electronic Engineering
基金
国家自然科学基金资助课题(60678037)
航空科学基金(20070112001)资助课题
关键词
光刻
双光谱法
胶厚检测
lithography
two-spectrum method
thickness ofphotoresist
