摘要
采用直流反应磁控溅射法制备了氧化铟锡(ITO)透明导电薄膜,通过四探针、紫外可见分光光度计、X射线衍射(XRD)、霍尔效应仪、扫描电镜(SEM)等对薄膜样品进行了表征,研究了溅射功率和氧分压对ITO薄膜微观结构和光电性能的影响,结果表明:溅射功率对ITO的光电性能影响较小,沉积速率随着溅射功率的增大而加快;随着氧分压的升高,载流子浓度降低,霍尔迁移率先增大后减小,电阻率逐渐增大。在优化的工艺条件下,制备了在可见光区平均透过率达85%、电阻率为1×10-4Ω.cm的光电性能优良的ITO薄膜。
Indium-tin-oxide （ITO） films were deposited on glass substrate by DC magnetron sputtering. The effects of DC power and oxygen partial pressure on the microstructure, electrical and optical properties of the ITO thin films were studied by four-point probe, X-ray diffraction （XRD）, UV-vis spectrometer, hall measurement and scanning electrical microscope （SEM）. The results showed that the films had a preferred orientation in the （222） plane. DC power had little influence on the optoelectrical properties of the ITO films and the deposition rate increased with the increase of DC power. As oxygen partial pressure increased, the Hall mobility of the films increased initially and then decreased while the charge carrier concentration decreased and the resistivity increased. As a result, ITO films with a resistivity of 1×10^-4Ω·cm, and an average transmittance of 85% in the visible spectrum were deposited successfully.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2009年第5期717-719,723,共4页
Journal of Functional Materials
基金
国家高技术研究发展计划(863计划)资助项目(2003AA513010)
关键词
氧化铟锡
直流磁控溅射
电阻率
透光率
indium tin oxide （ITO）
DC magnetron sputtering
resistivity
optical transmittance
