摘要
使用电子束蒸发法沉积了铝掺杂的氧化锌透明导电膜。通过对膜进行霍尔系数测量及XRD、SEM测试分析,详细研究了沉积时的基片温度对膜的电学性能的影响。结果表明:基片温度影响膜的载流子浓度、迁移率以及膜的结晶程度,在基片温度为200℃附近沉积的膜具有较低的电阻率和较高的透光率。
In this paper, the effects of substrate temperature on the resistivity of ZnO : Al films prepared by electron-beam evaporation have been investigated. The properties of the films have been analysed by through Hall effect, X-ray diffraction and the scanning electron microscopy. The results show that carrier concentration, Hall mobility and crystallinity of the films depend obviously on the deposition temperature. The film deposited at 200℃ has lower resistivity ad higher transmittance.
出处
《苏州大学学报（自然科学版）》
CAS
1998年第1期62-64,共3页
Journal of Soochow University(Natural Science Edition)
关键词
电子束蒸发沉积
氧化锌
铝
薄膜
电学性能
Electron-beam evaporation, Al-doped Zinc oxide films, Substrate temperature, Electrical properties.
