摘要
基于0.5μm双阱标准CMOS工艺,完成了一种适用于UHF频段无源RFID标签的倍压电路设计。该电路利用置于P阱中的NMOS管连接成二极管形式取代传统倍压电路中的肖特基二极管,避免了工艺上的特殊要求,与同工艺上PMOS管连接的二极管相比,有更低的开启电压。电路仿真结果表明,使用二极管连接的NMOS管能够满足倍压电路的设计要求。
Based on 0.5μm twin well CMOS process, a voltage muiltiplier used in passive UHF RFID tags was designed. Instead of Schottky diode, which was most widely used in half-wave voltage muiltiplier, the NMOS transistor in P-well was connected as diode in this circuit. This design avoided the special requirement of process and got lower forward voltage than its PMOS comparison. Simulation results shows that the diode-connected NMOS meets the demand of voltage muiltiplier.
出处
《微计算机信息》
2009年第14期194-196,共3页
Control & Automation
基金
基金申请人:孙玲
项目名称:江苏省高校重点实验室开放课题"射频识别系统关键模块集成电路设计"
基金颁发部门:江苏省教育厅(JSICK0605)
