摘要
本文对难熔金属及其硅化物的形成、特性进行了研究．主要对难熔金属Ｍｏ、难熔金属硅化物ＴｉＳｉ２、ＰｔＳｉ２等进行了探讨，采取了溅射难熔金属、热硅化反应的手段，对解决ＶＬＳＩ工艺的某些问题，如：（１）解决由于ＭＯＳ电路图形尺寸缩小带来的栅电阻增大的问题；（２）采用硅化物（如ＰｔＳｉ２）－阻挡层（Ｗ、Ｍｏ、Ｔｉ等）—Ａｌ多层金属布线。
In this paper, we studied the forms and properties of unmelting metals silicide TiSi 2, PtSi 2 by adopting the method of splashing unmelting metals and heat to silicify reaction. it plays an active role in resolving some questions in VISI technology. For example:(1)resolved the questions that grid resistor increase during decreasing the graph dimension of MOS circuit.(2)resolved the question that Ohmic contact and electron mobility by adopting silicide(PtSi 2) resist layer(W,Mo,Ti) Aluminium, multi layer meatal lines.
出处
《辽宁大学学报（自然科学版）》
CAS
1998年第1期52-55,共4页
Journal of Liaoning University：Natural Sciences Edition
关键词
磁控溅射
难熔金属
硅化物
薄膜
Megnetism controll splash, Unmeltingmetal, Silicide.
