摘要
采用一种新型的刻蚀气体——ＨＢｒ＋Ｈｅ作为反应离子刻蚀气体，用ＳｉＯ２作为刻硅槽的掩膜，在８～１３Ω·ｃｍＰ型（１００）硅片上，刻出槽宽１．２μｍ，槽深０．８μｍ的硅深槽，并对ＨＢｒ反应离子刻蚀硅的高度各向异性以及刻蚀过程中产生的“宽度”效应和“黑硅”现象进行了分析．
Reactive ion etching of the micro wide silicon trench is investigated by using a new etching gas HBr as the reactive ion etching gas. A silicon trench of width 1 2 μm and depth 8 8 μm at P type silicon wafer with resistivity of 8～ 13 Ω·cm and orientation of (100) are etched by using SiO 2 as the mask of the silicon trench to be etched. High anisotropy of HBr silicon trench etching, the “width effect” and the “black silicon” phenomenon arising in the etching process are analysed.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
1998年第1期76-78,共3页
Journal of Xidian University
