摘要
采用脉冲激光淀积法在硅衬底上生长了LaErO3薄膜,用X射线衍射仪、X射线电子能谱仪、高分辨透射电子显微镜研究了该薄膜的热学和电学性质.通过电容-电压测量得到了较好的电容-电压曲线,计算得出等效SiO2厚度为1.4nm.通过高分辨电镜可以看出即使经过700℃30sN2中快速热退火处理LaErO3薄膜与硅衬底之间的反应层也仅有几个原子层的厚度.X射线电子能谱分析得到非常少量的SiO2在沉积的过程中形成.测量的热学和电学性质表明LaErO3薄膜是高介电常数栅介质材料非常有前途的候选材料.
LaErO3 films were prepared on silicon substrates. The thermal stability and electrical properties of these films were characterized by using X-ray diffraction, X-ray photoelectron spectroscopy （XPS） and high resolution transition electron microscopy （HRTEM）. The good capacity-voltage curve of the stack Pt/LaErO3/Si was obtained, and the calculated equivalent thickness of SiO2 for high-k LaErO3 films was about 1.4 nm. The HRTEM im- age of the hetero-structure LaErO3/Si show that there exists an interface with a thickness of several atomic layer for LaErO3 films annealed with RTA process at 700 ℃ for 30 s, in consistence with the results of XPS studies. The ex- perimenlal results indicate that LaErO3 film is one of the promising candidates for high-k materials.
出处
《南京大学学报（自然科学版）》
CAS
CSCD
北大核心
2009年第2期147-152,共6页
Journal of Nanjing University（Natural Science）
