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一种硅埋置型微波多芯片组件封装的电性能

Performance of a silicon-based embedded MMCM package
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摘要 研究了一种基于体硅工艺和BCB厚膜布线技术的微波多芯片组件新封装结构,将特定组件中多个微波芯片埋置在接地金属化的硅腔体中,通过热压焊金凸点将芯片垂直引出,并于其上布置多层BCB/Au微波传输线,层间互连则连采用电镀金凸点为通柱。对封装中各微波信号通路的电学性能、封装环境对芯片电学功能的影响和可集成于封装中的Ku波段带通滤波器进行了模拟与优化研究。 A novel embedded package structure for Microwave Multichip Module （MMCM）is studied, which is based on MEMS process and BCB thick film technology. A set of microwave chips are embedded in metalized silicon cavities, and then electrically connected through bonded gold bumps to the upper multilayer BCB/Au transmission lines. Interlayer connection is realized by electroplated gold pillars. Per- formance of transmission lines, electric influence to chip introduced by package and Ku - band bandpass filters that can be integrated in this package are simulated and optimized by HFSS.
作者 戚龙松 罗乐
机构地区 中国科学院上海微系统与信息技术研究所
出处 《功能材料与器件学报》 CAS CSCD 北大核心 2009年第2期125-131,共7页 Journal of Functional Materials and Devices
关键词 多芯片组件 埋置型封装 微波传输性能 multichip module, embedded package, microwave transmission performance
分类号 O441.4 [理学—电磁学]
  • 相关文献

参考文献7

  • 1Ramirez R C, Jackson R W. A Technique for Interconnecting Millimeter Wave Integrated Circuits Using BCB and Bump Bonds [ J ]. IEEE Microwave and Wireless Components Letters, 2003,13(6) : 196 - 198.
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二级参考文献6

  • 1[1]D Richard Decker,Ramani Tatikola,Narayan Rangappa Mysoor.Multichip MMIC package for X and Ka bands [J].IEEE Transactions on MTT,February 1997,20(1):27-32.
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共引文献22

功能材料与器件学报
2009年 第2期

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