摘要
采用化学氧化法在不同温度下制备聚噻吩和聚3-辛基噻吩,通过红外光谱(FTIR),X衍射分析(XRD),核磁共振谱图(NMR),X光电子能谱(XPS)和紫外可见光谱(UV-Vis)等手段对聚合物进行了研究。结果表明,聚噻吩侧链基团和制备温度会影响聚合物的构型结构,引起聚合物结晶度的变化。聚3-辛基噻吩结晶度最低,低温制备的聚噻吩结晶度最高。导电性能研究表明,聚噻吩的构型结构和结晶度直接影响其电导率。
Polythiophene and Poly（3-octylthiophene） were synthesized by direct oxidative poly- merization under different temperatures. The chemical structure of samples were characterized by FTIR, XRD, NMR,XPS and UV-Vis respectively. The results showed that the strcture and the degree of crystallinity（DC） of samples depended on the length of side chain and reaction tempera- ture. Poly（3-octylthiophene） has a lower DC. Polytbiophene prepared under low temperature has a higher DC. Experimental results suggested that there is certain relationship between DC, chemical structure and conductivity of samples.
出处
《华东师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2009年第2期129-135,共7页
Journal of East China Normal University(Natural Science)
基金
上海市纳米科技专项基金(0252nm011)
关键词
聚噻吩
聚3-辛基噻吩
侧链
导电性能
结晶度
polythiophene
poly（3-octylthiophene）
side chain
conductive properties
DC
