摘要
对ＫＮｂＯ３多晶掺杂Ｋ２Ｏ－ＧｅＯ２半导陶瓷电阻的正温度系数效应进行了研究，着重分析了晶界势垒及其对电阻率的影响．
We studied the features of PTCR in KNbO3 semiconducting ceramics doping with K2OGeO2,and analysized especially intergranular potential barrier and its influences on resistivity on the basis of a corrected theoretical model of the intergranular layer.
出处
《云南大学学报（自然科学版）》
CAS
CSCD
1998年第S1期65-67,71,共4页
Journal of Yunnan University(Natural Sciences Edition)
关键词
正温度系数效应
半导体陶瓷
晶界势垒
铁电晶体
positive temperature coefficient,semiconducting ceramics,intergranular potential barrier,ferroelectric crystal
