摘要
利用本实验室生长的4H-SiC外延材料开展了SiC MESFET和MMIC的工艺技术研究。研制的SiC MESFET采用栅场板结构,显示出优异的脉冲功率特性,20mm栅宽器件在2GHz脉冲输出功率达100W。将四个20mm栅宽的SiC MESFET芯片通过内匹配技术进行功率合成,合成器件的脉冲功率超过320W,增益8.6dB。在实现SiC衬底减薄和通孔技术的基础上,设计并研制了国内第一片SiC微波功率MMIC,在2～4GHz频带内小信号增益大于10dB,脉冲输出功率最大超过10W。
Research carried out in the lab in Nanjing Electronic Devices Institute regarding SiC MESFET and MMIC technology is described in this paper, using 4H-SiC epitaxial materials developed by the lab. According to the research, SiC MESFETs with a gate width of 20 mm can produce a pulse power of over 100 W at 2 GHz. Four SiC MESFET chips with a 20 mm gate width are put together via power combination. The resultant device demonstrates a pulse power of over 320 W, a gain of 8.6 dB compared to an individual chip. With the application of SiC substrate thickness reduction and through hole technology, the lab is able to design the first SiC microwave-powered MMIC, with a small signal gain of more than 10 dB in a 2 -4 GHz frequency band, and a maximum pulse power output of more than 10 W.
出处
《中国电子科学研究院学报》
2009年第2期137-139,共3页
Journal of China Academy of Electronics and Information Technology
