摘要
对以Ｓｅ为基的非晶半导体材料的应用作以简单的回顾．利用热蒸发的方法制备了单层的Ｓｅ、Ｓｂ膜、含Ｓｂ的Ｓｅ膜以及Ｓｂ／Ｓｅ双层薄膜．利用Ｘ射线衍射技术分析了薄膜退火前后的晶化特性，用光学显微镜观察了薄膜退火前后的表面形貌，发现双层膜表面出现较多的裂纹。
Abstract A brief review of applications in amorphous semiconductors is made based on the Se material. Single layer of thin films of Se, Sb, and Sb doped in Se and double layers of Sb deposited on Se film were prepared by using thermal evaporation method. X ray diffraction technology is applied to research the crystallization characteristics of thin films before and after furnace annealing and the morphology of the double layers is observed by using optical microscope. Crackin is found on the surface of double layers after annealing. The reasons of cracking are analyzed by using X ray diffraction combined with the thermal parameters of the materials.
关键词
硒
锑
半导体薄膜技术
Crystallization
Thin films
X ray diffraction
