摘要
采用三相埋沟结构，设计并研制成功用于高背景下红外探测器的高灵敏度4×128元TDICCD信号处理器件。器件转移效率99．99％，动态范围60dB，时钟频率10MHz。文章详细阐述该器件的工作原理、结构设计和制作工艺。
A high sensitive 4 ×128 pixel TDI CCD signal processing device used for infrared detector under high background condition has been successfully designed and fabricated with three phase buried - channel construction.The transfer efficiency of 99. 99% is achieved, with dynamic range of 60 dB and clock frequency of 10 MHz. The operation principle, design consideration and fabrication technology for the device are described in detail.
出处
《半导体光电》
CAS
CSCD
北大核心
1998年第2期67-70,共4页
Semiconductor Optoelectronics
