摘要
利用UV激光的光解剥离(APD)效应,对半导体材料InP进行了直接刻蚀研究,获得了良好的结果。采用波长为308nm,光脉冲宽度20ns的XeCl)准分子激光器,APD刻蚀的光能量密度阈值为390mJ/cm^2;与理论结果相比较,两者具有良好的一致性。同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
An investigation of direct etching on semiconductor InP by UV laser APD effect has been made and a good result was achieved. The experimental APD fluency threshold is about 390 mJ/cm^2 by an XeCl excimer laser with a wavelength of 308 nm and a pulse width of 20 ns. Compared with the theoretical results, they are coincident well with each other. Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
出处
《吉林大学自然科学学报》
CAS
CSCD
1990年第4期44-46,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
半导体
激光
刻蚀
光解剥离
准分子
excimer laser, ablative photodecomposition, bond photo-broken, laser fluency threshold
