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Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems 被引量:8

Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems
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摘要 Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods. Unbalanced magnetron sputtering, by producing dense secondary plasma around the substrate, provides a high ion current density. The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal, alloy, and ceramic thin films. The'key factor in the CFUBMS system is the ability to transport high ion currents to the substrate, which can enhance the formation of full dense coatings at relatively low value homologous temperature. The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes. Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface. Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods. Unbalanced magnetron sputtering, by producing dense secondary plasma around the substrate, provides a high ion current density. The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal, alloy, and ceramic thin films. The'key factor in the CFUBMS system is the ability to transport high ion currents to the substrate, which can enhance the formation of full dense coatings at relatively low value homologous temperature. The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes. Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.
出处 《Journal of University of Science and Technology Beijing》 CSCD 2008年第6期775-781,共7页 北京科技大学学报(英文版)
关键词 magnetron sputtering closed-field unbalanced magnetron sputtering system (CFUBMS) ion-to-atom ratio unbalancedmagnetron sputtering magnetron sputtering closed-field unbalanced magnetron sputtering system (CFUBMS) ion-to-atom ratio unbalancedmagnetron sputtering
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  • 1C. Engstrm,T. Berlind,J. Birch, et al.Design, plasma studies, and ion assisted thin film growth in an unbalanceddual target magnetron sputtering system with a solenoid coil[].Vacuum.2000
  • 2J.J. Olaya,G. Wei,S.E. Rodil, et al.Influence of the ionatom flux ratio on the mechanical properties of chromium nitride thin films[].Vacuum.2007
  • 3S.E. Rodil,J.J. Olaya,S. Muhl, et al.The influence of the magnetic field configuration on plasma parameters and microstructure of niobium nitride films[].Surface and Coatings Technology.2007
  • 4S.E. Rodil,J.J. Olaya.Unbalanced magnetic field configuration: plasma and film properties[].Journal of Physics Condensed Matter.2006
  • 5F. Adibi,J.E. Greene,L. Hultman,J. E. Sundgren.Effects of high-flux low-energy (20-100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra-high-vacuum reactive magnetron sputtering[].Journal of Applied Physics.1993
  • 6J. J. Olaya,S. E.Rodil,S.Muhl,E.Sanchez.Comparative study of chromium nitride coatings deposited by unbalanced and balanced magnetron sputtering[].Thin Solid films.2005
  • 7Window B,Savvides N.Charged Particle Fluxes from Planar Magnetron Sputtering Sources[].Journal of Vacuum Science and Technology.1986
  • 8Window B,Savvides N.Unbalanced dc magnetrons as sources of high ion fluxes[].Journal of Vacuum Science & Technology A.1986
  • 9N.Savvides,B.Window.Unbalanced magnetrons ion-assisted deposition and property modification of thin films[].JVacuum Science and Technology A.1986
  • 10Kelly P J,Arnell R D.Magnetron sputtering:a review of recent developments and applications[].Vacuum.2000

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