摘要
提出了用于高频电力线路中的一种大功率软恢复二极管新结构。该二极管阳极由低注入效率的ｐ区及高注入效率的ｐ＋区组成。大电流下ｐ＋区的高注入效率使二极管正向压降显著降低，而在换向时，ｐ区的低注入效率又能使反向峰值电流显著下降，反向电流衰减明显变软。阴极是采用理想欧姆接触结构，同时为电子和空穴提供抽取通道，大大降低了反向恢复时间。采用传统功率半导体器件的常规工艺，做出了反向恢复软度因子ｔＢ／ｔＡ最大，ｄｉ（ｒｅｃ）／ｄｔ最小的大功率二极管。测试证明其电气特性优于国内外同类型的大功率二极管。
A new structure of the high speed soft recovery power diode has been demonstrated.Its anode consists of a p+ region of high injection efficiency and a p region of low injection efficiency.The high efficiency of p+ region becomes effective only under high current density and forward voltage drop decreases notably.By commutation,reverse peak current reduces greatly and its decay is soft.Its cathode adopts ideal ohmic contact which can simultaneously allow the transport of holes and electrons across its surface and decrease reverse recovery time significantly.Power diodes whose reverse recovery softness tB/tA is the biggest and di(rec)/dt is the smallest have been manufactured.The results prove that the characteristics of this kind of diode is better than that of any other power diode using conventional power semiconductor process.
出处
《半导体技术》
CAS
CSCD
北大核心
1998年第1期30-34,共5页
Semiconductor Technology
关键词
二极管
欧姆接触
功率二极管
SIOD
Diode Selfadjusting emitting efficiency Ideal ohmic contact Softrecovery
