摘要
利用扫描电镜的选区电子通道花样技术研究了用ＥＬＩＤ磨削技术制作的两种单晶硅片磨削样品的表面变质层的厚度及其结构。结果表明，表面粗糙度依次为９．５ｎｍ和２２．５ｎｍ两种〈１１１〉单晶硅片样品的变质层厚度分别为２．８μｍ和４．８μｍ。
Damaged layer was formed on the surface of silicon wafer during using ELID grinding technique to refine its surface roughness.the thickness and the structure of the damaged layer on the surface of two monocrystalline silicon wafers have been investigated by SACP technique.The results show that the thickness of the damaged layer on silicon wafers with surface roughness of 95nm and 227nm are 28μm and 48μm respectively.
出处
《电子显微学报》
CAS
CSCD
1998年第1期51-54,共4页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金
关键词
SACP
ELID磨削
硅片
超大规模
集成电路
SACP\ \ ELID\ \ ultraprecision grinding\ \ silicon wafer\ \ damaged layer
