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不同碱液单晶硅表面织构的初步研究(英文) 被引量：2

Study on the Texturization of c-Si Wafers by Different Kinds of Alkaline for Heterojunction Solar Cells
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摘要 分别以氢氧化钠(NaOH)、碳酸钠(Na2CO3)和磷酸钠(Na3PO4.12H2O)作为刻蚀剂,研究刻蚀浓度、温度(θ)、刻蚀时间(te)和添加剂(异丙醇(IPA)、碳酸氢钠(NaHCO3))对晶体硅表面织构化的影响,用场发射扫描电子显微镜表征织构效果.通过优化工艺,可得到较低的平均表面反射率(Rav),按使用的刻蚀剂分别为:9.70%(NaOH)、9.76%(Na2CO3)和8.63%(Na3PO4.12H2O).据此分析了Rav和织构表面形貌之间的关系.发现添加剂IPA在Na3PO4.12H2O或Na2CO3与NaOH 3种刻蚀剂溶液中均可明显起改善织构效果.NaHCO3在某些方面具有与IPA的相同作用,同时又能促进大金字塔的形成.文中同时初步提出有关刻蚀过程的机理. The texturization of （100） crystalline silicon （c-Si） wafer was studied by field-emission scanning electron microscope using different kinds of etchant： sodium hydroxide, sodium carbonate and tribasic sodium phosphate. By optimizing the etching parameters, the lowest values of averaged reflectance （Rav） were obtained to be 9.70% for NaOH, 9.76% for Na2CO3 and 8.63% for Na3PO4· 12H2O, which is comparable to that of the wafer with textured surface covered with an anti-reflection coating of either silicon nitride or thermally grown silicon dioxide. The relation of Rav and surface morphology of textured wafer was analyzed. Moreover, special emphasis was put on the role of isopropyl alcohol （IPA） and sodium bicarbonate for texturization. It is proved that IPA decreased the etching rate but improved the morphology of the textured surface. It seems that played NaHCO3 played the similar role of IPA but resulted in the formation of large pyramid. The mechanism of texturization by different kinds of etchant was suggested.
作者 豆玉华 周玉琴 朱美芳 宋爽 刘丰珍 刘金龙 张占军
机构地区 中国科学院研究生院 北京太阳能研究所
出处 《电化学》 CAS CSCD 北大核心 2008年第4期358-364,共7页 Journal of Electrochemistry
基金 Supported by the National High Technology Research and Development Program of China(No.2006AA05Z408) National Key Basic Research Program of China(No.2006CD202601)
关键词 单晶硅 织构 碱液 反射率 表面形貌 crystalhne silicon texturization alkahne reflectance surface morphology
分类号 TM914.41 [电气工程—电力电子与电力传动]
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参考文献10

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同被引文献25

  • 1沈辉,柳锡运.太阳能电池单晶硅表面织构化正交试验[J].华南理工大学学报（自然科学版）,2006,34(10):11-14. 被引量：11
  • 2KIM J, KIM Y. The enhancement of homogeneity in the textured structure of silicon crystal by using ultrasonic wave in the caustic etching process[J]. Solar Energy Materials and Solar Cells,2004,81(2) : 239 247.
  • 3VALLEJO B, GONZAI.EZ MANAS M, MARTINEZ I.OPEZ J,et al. On the texturization of monocrystalline silicon with sodium carbonate solutions[J]. Solar Energy, 2007,81 (5) : 565-569.
  • 4XI Zhen-qiang, YANG De-ren, DAN Wu, et al. Investigation of texturization for monorystalline silicon solar cells with different kinds of alkaline [J]. Renewable Energy, 2004, 29 (13), 2101-2107.
  • 5SINGH PK, KUMAR R, LAL M, et al. Effectiveness of anisotropic etching of silicon in aqueous alkaline solutions [J]. Solar Energy Materials and Solar Cells, 2001,70 ( 1 ) : 103- 113.
  • 6SUNDARAM K B, VIJAYAKUMAR A, SUBRAMANIAN G, et al. Smooth etching of silicon using TMAH andisopropylalcohol for Microelectronic Engineering, MEMS applications [ J]. 2005,77(3-4) : 230-241.
  • 7YOU J, KIM D, HUH J, et al. Experiments on anisotropic etching of Si in TMAH[J]. Solar Energy Materials and Solar Cells, 2001,66(14) : 37-44.
  • 8IENCINELLA D, CENTURIONI E, RIZZOLI R, et al. An optimized texturing process for silicon solar cell substrates using TMAH [J]. Solar Energy Materials arid Solar Cells, 2005,87(1-4) : 725-732.
  • 9XI Zhen-qiang, YANG De-ren, QUE Duan-lin, et al. Texturization of monocrystalline silicon with triadic sodium phosphate[J]. Sol Energy Mater Sol Cells, 2003,77 (3) : 255-263.
  • 10NISHIMOTO Y, NAMBA K. Investigation of texturization for crystalline silicon solar cells with sodium carbonate solutions [J]. Sol Energy Mater Sol Cells ,2000,61(4) :393-402.

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电化学
2008年 第4期

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