摘要
提出了多晶硅薄膜晶体管的一种Halo LDD新结构,这种结构是在基于LDD结构的基础上,在沟道靠近源、漏端引入高掺杂的Halo区。并利用工艺和器件模拟软件对该Halo LDD P-Si TFT的电学特性进行了分析,并将其与常规结构、LDD结构和Halo结构进行了比较。发现Halo LDD结构的P-Si TFT能有效地降低泄漏电流、抑制阈值电压漂移和Kink效应;减少因尺寸减小后所带来的一系列问题。
A new device structure of polysilicon thin film transistor, Halo LDD P-Si TFT, has been pro- posed. This structure introduces heavy doped Halo structure in channel near the source and drain bn the basis of LDD P-Si TFT. Electrical characteristics of this structure has been studied by using semiconductor process and device simulation tools. Compared to P-Si TFTs with the conventional structure, the LDD structure and the Halo structure, the Halo LDD P-Si TFT shows the promising comprehensive ability of decreasing the leakage current, suppressing the threshold voltage shift and the Kink effect. So reducing a range of issue as device dimensions are continually scaled down.
出处
《电子器件》
CAS
2008年第6期1783-1785,1789,共4页
Chinese Journal of Electron Devices
基金
江苏省自然科学基金项目资助(BK2007026)
教育部新世纪优秀人才支持计划资助(NCET-06-0484)
