摘要
利用脉冲激光沉积技术(PLD)在硅衬底上生长高c轴取向LiNbO3晶体薄膜,研究了激光脉冲频率即薄膜沉积速率对薄膜结晶质量及取向性的影响,发现激光脉冲频率对薄膜的c轴取向性基本没有影响,但对薄膜的结晶质量影响较大,激光脉冲频率为3Hz时获得了高结晶质量的c轴取向LiNbO3晶体薄膜。XPS测试表明制得薄膜的组分符合等化学计量比,AFM测试显示制备的薄膜表面光滑,表面粗糙度为4.3nm。棱镜耦合法测试表明制备的LiNbO3薄膜具有优异的光波导性能,光传输损耗为1.14dB/cm。
Highly c-axis oriented LiNbO3 thin films are grown on SiO2/Si substrates by the pulsed laser deposition. The effects of depostion rate on the growth of the film texture and crystallinity are systematically investigated, The deposition rate of LiNbO3 thin films is controlled with frequency of pulsed laser. The results show that the laser frequency can strongly influenced the crystallographic quality of LiNbO3 films,but can not influenced c-axis orientation of LiNbO3 films. The XPS measurement shows that the achieved film is stoichiometry. The AFM measurement shows that the film has smooth surface. The RMS roughness of the film surface was 4.3 nm. Good optical vaveguide properties of LiNbO3 films are observed by u sing of the prism coupled method. The optical propagation loss of LiNbO3 films at 3 Hz is 1.14 dB/cm.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2008年第11期1486-1489,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金项目资助(90101009
50702051)
