期刊文献+

单晶硅加工裂纹的离散元仿真研究 被引量:14

Discrete Element Method Simulation of Cracks in Monocrystalline Silicon Machining Process
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摘要 通过力学性能数字试验模拟及校准,建立了单晶硅的离散元模型。基于该模型对单晶硅微加工过程进行了动态模拟,分析了不同切削速度、切削深度及刀具前角等对加工后表面裂纹情况及切屑形成的影响,结果表明:加工后表面裂纹的数目及其最大深度均随刀具前角的增大而减小,而随切削速度及切削深度的增大而增大;切削速度越高,切削深度对加工表面的质量影响越大;随着刀具由正前角变为负前角,刀具前方特别是刀具下方的材料损伤程度逐渐增大,在前角变至0°之前,刀具下方的材料损伤程度基本上保持不变,而当前角变为-15°时,刀具下方的材料变形程度显著增大。 Discrete element model of monocrystalline silicon was constructed and calibrated. Based on the model, the dynamic process of micro-machining of silicon was simulated, and the effects of different cutting speeds, cutting depths and rank angles on the formation of surface cracks and debris were also analyzed. Results show that both of the surface crack number and maximum depth increases with increase of the cutting speed and cutting depth, while decreases as the rake angle increases; when the rake angle becomes positive from negative, the damage zone which is under and in front of the tool gradually increases; the damage level of silicon are remained without changes before the rank angle is changed to 0°, but the damage level becomes dramatically heavy when the rake angle reaches to -15°.
机构地区 湘潭大学 利兹大学
出处 《中国机械工程》 EI CAS CSCD 北大核心 2008年第21期2545-2548,2581,共5页 China Mechanical Engineering
基金 国家自然科学基金资助项目(50675185) 教育部新世纪优秀人才支持计划资助项目(NCET06-0708)
关键词 单晶硅 加工 裂纹 离散元 仿真 monocrystalline silicon machining crack discrete element simulation
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参考文献12

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