应用于等离子显示驱动的高压集成电路工艺

High-voltage integrated circuit technology for plasma display panel drivers

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摘要介绍了等离子显示板(PDP)扫描驱动集成电路(IC)的结构和工作原理,提出了一种与2.0μm标准CMOS工艺完全兼容的新型高压BCD工艺.设计了新型场氧作厚栅HV-pMOS器件和薄栅氧HV-nVDMOS器件,开发了一种新型的PDP扫描驱动集成电路.采用此工艺可以节省三个光刻版、两次注入(HV-N阱和PDA)和一次氧化工艺,有效地降低工艺复杂度和生产成本.最终流片和测试结果表明,HV-nVDMOS和HV-pMOS管的耐压均超过165 V,达到系统设计要求.当电源电压为90 V、负载为200 pF时,PDP扫描驱动芯片的上升沿和下降沿时间分别为165和30 ns,这充分验证了芯片具有很强的驱动电流能力. A new high-voltage Bipolar-CMOS-DMOS （BCD） technology compatible with 2.0 gm standard CMOS process was developed for plasma display panel （PDP） scan driver intergrated circuit （IC）. The new field-oxide gate high-voltage pMOS and thin-oxide high-voltage nVDMOS were proposed and a new PDP scan driver IC was designed. The technique can reduce three masks, two ion-implantations and one oxidation to reduce process complexity and cost. Results showed that the breakdown voltages of HV-nVDMOS and HV-pMOS were both exceed 165 V, which achieved the system requirements. The rising and falling time of the PDP scan driver IC were 165 and 30 ns respectively with 90 V power supply and 200 pF capacitive load, which indicated a high driving capability.

作者洪慧韩雁叶晓伟

机构地区浙江大学微电子与光电子研究所杭州电子科技大学微电子CAD研究所

出处《浙江大学学报（工学版）》 EI CAS CSCD 北大核心 2008年第10期1715-1718,共4页 Journal of Zhejiang University：Engineering Science

基金浙江省科技计划资助项目(2004C31094)

关键词等离子平板显示屏扫描驱动集成电路场氧栅高压驱动电路 plasma display panel（PDP） scan driver intergrated circuit field-oxide gate high voltage driver circuit

分类号 TN43 [电子电信—微电子学与固体电子学]

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1DESHAMPS J, DOYEUX H. Color PDP development: an exciting and ever progressing story [C] // Proceedings of the 3th International Display Workshops. Kobe: [s. n.], 1996: 275-278.
2SUN Wei-feng, SHI Long-xing, SUN Zhi-lin, et al. High-voltage power IC technology with nVDMOS, RE- SURF pLDMOS, and novel level-shift circuit for PDP scan-driver IC [J]. IEEE Transactions on Electron Devices, 2006, 54(4): 891-896.
3SONG Q S, SONG S S. High voltage output circuit using n- and n-LDMOSFET with thick gate oxide for PDP driver IC [J]. IEEE Electronics Letters, 2004, 40(16) :989 - 990.
4SUMIDA H, HIRABAYASHI A, KOBAYASHI H. A high-voltage lateral IGBT with significantly improved on-state characteristics on SOl for an advanced PDP scan driver IC [C]///2002 IEEE International SOI Conference. Williamsburg: [s. n.], 2002: 64-65.
5KIM J, ROH T M, KIM S G, et al. High-voltage power integrated circuit technology using SOI for driving plasma display panels [J].IEEE Transactions on Electron Devices, 2001, 48(6):1256- 1263.
6ROH T M, LEE D W, KIM J, et al. High-voltage SOI power IC technology with non-RESURF n-LDMOSFET and RESURF p-LDMOSFET for PDP scan-driver applications[J]. Journal of the Korean Physical Society, 2000, 37(6) :889 - 892.
7BALLAN H, DECLERCQ M. High voltage devices and circuits in standard CMOS technologies [M]. Netherlands: Kluwer Academic Publisher, 1999.
8SUMIDA H, HIRABAYASHI A, SHIMABUKURO H, et al. A high performance plasma display panel driver IC using SOI [C]//Proceedings of 1998 International Symposium on Power Semiconductor Devices and ICs. Kyoto: [s. n.], 1998: 137-140.
9HASTINGS A. The art of analog layout [M]. New Jersey: Prentice-Hall, 2001.

1戴文娟.高压集成电路工艺在等离子显示驱动中的应用分析[J].消费电子,2014(16):85-85.
2等离子核心技术获突破[J].新质量,2003(4):3-35.
3John C.Desko Jr.,李秉忠.一种高压集成电路工艺的抗辐射加固[J].微电子学,1991,21(3):45-50.
4Wegh.,RT 沈雷军等.LiGdF4：Eu^3＋体系中的下转换可见光量子裁剪[J].现代冶金（内蒙古）,2002(1):47-50.
5方健,郭宇峰,雷宇,张波,李肇基.SOI高压器件及高压集成技术[J].微电子学,2004,34(4):390-397. 被引量：2
6Albert Lee,陈辰.面向21世纪消费类产品的等离子显示板[J].电子产品世界,1997,4(10):46-47.
7吴祖垲,钱慰宗,姚宗熙.彩色显像管、等离子显示板及荧光灯发光效率的探讨[J].自然杂志,1998,20(6):309-313.
8贾正根.等离子显示板的发展方向[J].真空电子技术,1990,3(4):20-23.
9钱志远.追踪PDP[J].家庭影院技术,1999(12):20-22.
10贾正根.等离子显示板在军事上的应用[J].电光与控制,1991(2):52-57.

浙江大学学报（工学版）

2008年第10期

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应用于等离子显示驱动的高压集成电路工艺

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