摘要
针对隧道再生半导体激光器,建立了内部的热源分布模型.模拟计算得到了2个有源区隧道再生半导体激光器三维稳态温度分布,分析了焊料空隙对芯片内部稳态温度分布的影响.结果表明,当芯片与焊料为理想全接触时,靠近衬底的有源区的热量积累略高于靠近热沉的有源区的热量;随着空隙的增大,焊料空隙上方靠近热沉的有源区的局部温升较快,容易引起正反馈的电热烧毁,与实验结果吻合.
A model of heat source is presented for tunnel regeneration laser diodes. Three dimension temperature distribution of the tunnel regeneration semiconductor laser with two active regions is simulated by using the finite element method, and the influence of solder voids on temperature distribution is discussed. Simulated result shows that thermal accumulating of the active region close to the substrate is higher than that of the active region close to the heat sink when there is no solder voids between the diode and the sink. Whereas localized temperature of the active region close to the heat sink rise more rapidly with localized hot spot caused by solder voids, which lead to positive feedback resulting in catastrophic optical damage （COD）. The experimental phenomena are well coincident with the simulations.
出处
《北京工业大学学报》
EI
CAS
CSCD
北大核心
2008年第10期1038-1042,共5页
Journal of Beijing University of Technology
基金
国家重点基础研究发展计划项目资助(2006CB604902)
国家自然科学基金项目资助(60506012)．
关键词
半导体激光器
温度分布
隧道再生
焊料空隙
semiconductor laser
temperature distribution
tunnel regeneration
solder void
