摘要
介绍了SiC宽禁带功率器件的特性,与Si功率器件相比,该器件在输出功率、功率密度、工作频率、工作带宽、环境适应性、抗辐射能力等方面有卓越的性能。利用SiC宽禁带功率器件设计制作了L波段100W功率放大器。对SiC宽禁带功率放大器进行性能测试和环境实验,分析了SiC宽禁带功率器件的性能特点和优势。SiC宽禁带功率器件有利于提高功率放大器的工作带宽,改善功率放大器的环境适应性。
The feature of SiC WBG semiconductor power device is introduced. Compared with Si power device, it has remarkable advantages in output power, power density, operating frequency, operating bandwidth, environment adaptability and anti-radiation and so on. An L band IOOW power amplifier was developed with the SiC wide band gap semiconductor power devices. The performance characteristics and advantages of the SiC wide band gap power devices are analyzed in detail. The performance test and environment experiment of the amplifier were carried out, which showed that the bandwidth and the environmental adaptability of the power amplifier can be improved with the application of SiC wide band gap power semiconductor devices.
出处
《微波学报》
CSCD
北大核心
2008年第5期40-44,共5页
Journal of Microwaves
关键词
SiC功率器件
固态功率放大器
宽禁带
SiC power device, Solid-state power amplifier, Wide band gap （ WBG）
