摘要
针对实验研究中所用的转换靶(浓缩铀镀片),采用了背对背电离室、小立体角定量装置及大面积金硅面垒半导体探测器三种方式来准确定量其镀层质量厚度,并对结果进行了不确定度分析。
The plate-thickness of transform target（enriched Uranium-electric plating and depleted Uranium-electric plating）have been measured using Back to Back Ionization Chamber, Small solid angle device and Au-si surface barrier Semi-condaetor. Also,the uncertainties in the experiment was analysised.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2008年第4期817-820,共4页
Nuclear Electronics & Detection Technology
关键词
铀镀层
背对背电离室
小立体角定量装置
半导体探测器
质量厚度
Uranium-electric plating
Back to Back Ionization Chamber
Small solid angle device
Semiconductor
plate-thickness
