摘要
采用OMM IC 0.18μm GaAs pHEMT工艺,研制了毫米波单片有源混频器.该混频器选用单栅极单端FET混频结构.在中频输出端设计了低通滤波器,以提高LO-IF、RF-IF的隔离度.芯片的尺寸仅为0.95mm×1.85mm.在射频频率为39GHz、输出中频频率为3GHz时,该混频器的变频增益为0.6dB,LO-IF隔离度大于55dB,RF-IF的隔离度大于30dB.
A millimeter wave active mixer MMIC was designed and implemented by using OMMIC 0. 18μm GaAs pHEMT process. Single-gate single-ended FET structure was employed in mixer design. A low-pass filter was designed to improve the LO-IF isolation and RF-IF isolation. The chip size is only 0. 95mm × 1.85mm. The measured conversion gain is 0.6dB at 39GHz RF frequency and 3GHz output IF frequency. The measured LO-IF isolation is above 55dB and RF-IF isolation is above 30dB.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第5期333-336,共4页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金委创新群体基金(60621002)
国家863项目资助(2007AA01Z2B4)
