摘要
Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The A1/ZrO2/AI cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Ai/ZrO2/AI ceil can be explained by assuming that anode/ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.
Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The A1/ZrO2/AI cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Ai/ZrO2/AI ceil can be explained by assuming that anode/ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60706033, 60578047 and 60676007.
