摘要
通过射频反应磁控溅射在玻璃基片上制备TiO2薄膜。采用X射线衍射仪、Ranman光谱仪和原子力显微镜研究退火温度对薄膜晶体结构和表面形貌的影响;还探讨了磁控溅射氧分压对薄膜性能的影响。结果表明:磁控溅射制备的薄膜在不同温度下退火,发现300℃退火薄膜没有结晶,薄膜表面呈圆形离散的颗粒状;400℃退火出现锐钛矿结构,是连续的致密均匀薄膜;500℃退火后薄膜锐钛矿结构更完善,(101)方向开始优先生长,空隙率变大,且锐钛矿结构更完整。随着退火温度的升高晶粒长大拉曼光谱出现红移,拉曼光谱所反应的锐钛矿信息增强,500℃退火时197cm-1出现了Eg振动模式。和标准的单晶TiO2体材料相比,拉曼峰位置都略有红移是纳米量子尺寸效应造成的。氩氧比分别为9∶1、7∶3和6∶4溅射制备的薄膜通过400℃退火后的XRD衍射谱没有明显的区别,但拉曼光谱显示氩氧比为7∶3时结晶要完善些。
TiO2 thin films were deposited on glass substrates by RF magnetron sputtering and annealed at different temperatures. The effect of annealing temperature on film＇s crystalline structure and surface morphology were studied with XRD, Raman spectroscopy an AFM, as well as the effect of O2 partial pressure on film properties. The results showed that annealed at 300℃ no crystallization is found in thin film, and its surface presents discrete circular grains. The annealing temperature at which the surface of film becomes anatase-structured symmetrically compact and homogeneous is 400 ℃, as shown in AFM images. When annealed at 500℃, the anatase structure becomes more perfect and grows with （101） preferred orientation and bigger porosity. However, the surface becomes less symmetrical with more surface defects. Bathochromic shift was observed in the Raman spectrum because of grain growth in higher temperature, and the Eg vibration mode was found at 197 cm^-1 when annealed at 500℃. There is no obvious structure difference found when the films are sputtered under different oxygen partial pressures in XRD patterns, but in Raman spectra the structure behaves a bit better when the pressure ratio of argon to oxygen is 7：3.
出处
《真空》
CAS
北大核心
2008年第5期38-41,共4页
Vacuum
基金
广东省自然科学基金项目(No.04010480)
广东科技攻关项目(2003Z3-D2011)。
关键词
射频反应磁控溅射
纳米二氧化钛薄膜
锐钛矿
退火
氩氧比
RF magnetron sputtering
nano-scaled TiO2 thin film
anatase
annealing
pressure ratio of argon to oxygen
