摘要
对于超薄、分离的大功率半导体器件,其背面金属粘附以及焊料接点的要求近几年有了显著地提高。为了对硅片表面提供一种最佳化的背面金属粘附接触,需要指定一种定制的背面硅型、电阻率、掺杂层以及淀积金属或金属堆叠。这种表面很关键,以致在封装应力和加热情况下背面金属层不发生龟裂或剥落,并且引起成品率或性能损失。通过采用单圆片湿法加工和一种专一的近似化学作用一起对圆片背面有选择地处理,使不同的背面金属化处理实现了最佳化。
The need for back-side metal adhesion and solder contact for ultra-thin, discrete, high-power semiconductor devices has increased significantly over the past several years. To provide an optimized back-side metal adhesion contact to the silicon wafer＇ s surface, a tailored back-side surface is required for the specific silicon type, resistivity, and dopant level, as well as the metal or metal stack being deposited. This surface is critical so that the back-side metal layer does not crack or peel from the under-package stress and heat, and result in yield or performance loss. Wafer back-side surfaces can be selectively tailored with a single roughness chemistry using a single-wafer wet process, which allows surfaces to be optimized for different back-side metallization processes is introduced in this paper.
出处
《电子工业专用设备》
2008年第9期49-52,共4页
Equipment for Electronic Products Manufacturing
关键词
背面金属粘附
单圆片湿法加工
选择性处理
背面金属化
Back-side metal adhesion
Single-wafer wet process
Selectively tailored
Back-side metallization
