摘要
对Ｋｕｚｎｅｔｓｏｖ采用的速率方程加以修正，考虑了俄歇效应的影响，载流子寿命不再作为常数处理，而写成载流子浓度的函数。由此导出了两段式双稳半导体激光器下跳阈值点载流子浓度所满足的隐函数解析表达式。通过该解析表达式确定出了器件存在双稳的必要条件。进而讨论了俄歇复合系数、吸收区偏置电流和长度等对双稳特性的影响。
Based on modified rate equations,a closed form solution is deduced for carrier density at switch-off in two-segment bistable semiconductor lasers.As a result,conditions for bistability in these lasers are obtained.Effects of Auger coefficient and bias current of absorber segment on bistability are discussed.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
1997年第5期327-330,358,共5页
Semiconductor Optoelectronics
基金
铁道部科技发展资助
关键词
半导体器件
半导体激光器
速率方程
Semiconductor Devices,Two-segment Bistable Semiconductor Lasers,Rate Equations
