摘要
通过应用Ｓｃｈａｒｆｅｔｅｒ－Ｇｕｍｍｅｌ解法数值求解Ｐｏｉｓｓｏｎ方程，对热平衡μｃ－Ｓｉ∶Ｈｐ－ｉ－ｎ薄膜太阳能电池进行计算机数值模拟。结果表明，光吸收体ｉ层中Ｎ型或Ｐ型掺杂都会在ｉ层中造成低场区而不利于光生载流子传输，指出μｃ－Ｓｉ∶Ｈｐ－ｉ－ｎ太阳能电池制造中采用补偿μｃ－Ｓｉ∶Ｈ薄膜充当吸收体ｉ层能提高长波（＞８００ｎｍ）载流子收集效率。
A computer simulation model of μcSi∶H pin thin film solar cells at thermodynamic equilibrium using scharfetterGummel method to solve Poisson equation has been developed. The results indicate that the ntype dopping or ptype dopping changes the electric field distribution and leads to a lowfield region in the i layer, reducing the transport of photogenerated carrier. And adopted the compensated μcSi∶H as light absorber, the carrier collection efficiency at wavelength over 800 nm is improved, increasing the short circuit current of the cells.
出处
《电子器件》
CAS
1997年第4期1-5,共5页
Chinese Journal of Electron Devices
关键词
薄膜太阳能电池
载流子收集效率
太阳能电池
μcSi∶H pin thin film solar cellcarrier collection efficienceNewton Raphsonsolution technique
