摘要
本文采用高温烧结和真空蒸发制备了ＣｄＴｅ光敏薄膜，探讨了制备工艺对ＣｄＴｅ薄膜性能和结构的影响，得到在基片温度为１３０℃左右制备的ＣｄＴｅ薄膜具有明显的光敏特性，并得到ＣｄＴｅ材料的禁带宽度为１．６３ｅＶ。利用Ｘ衍射对不同基片温度下制备的ＣｄＴｅ薄膜材料进行了结构分析，发现基片温度为１３０℃左右制备的ＣｄＴｅ薄膜具有明显的衍射峰。
Cadmium chalcogenides have been prepared by sintering and the thin films have been deposited by vacuum evaporation technique. The effects of fabrication environments on the characteristics of CdTe thin films have been investigated,and the results show that the thin films fabricated at about 130℃ substrate temperature have obvious optoelectronic effects and the band gap of CdTe thin films is about 1. 63 eV. The structures are determined by X-ray diffraction analysis. It is found that the CdTe fabricated at the substrate temperature about 130℃ can provide the most significant diffraction contrast.
出处
《真空电子技术》
1997年第6期19-22,共4页
Vacuum Electronics
关键词
Ⅱ-Ⅵ族
化合物半导体
光敏薄膜
光电导效应
Ⅱ-Ⅳ compound semiconductor
Thin film
Optical sensitivity
Chalcogenides
