摘要
利用多粒子Monte Carlo方法对含位错Ga_xIn_(1-x)N材料的输运性质进行了研究,计算表明材料的漂移速度随温度升高而降低,InN的漂移速度的温度特性优于GaN.GaN和InN的迁移率在相同温度范围内随温度的变化趋势不同,同时位错密度对材料迁移率的温度特性影响较大。
A three-valley Monte Carlo（MC） simulation approach was used to investigate temperature dependence of electron transport in GaxIn1-xN. Numerical results shows that drift velocity drops with the increase of temperature and InN outperforms GaN in this field. The temperature dependences of mobility in GaN and InN are different. Moreover, dislocation density has significant impact on the temperature dependence of mobility.
出处
《工程热物理学报》
EI
CAS
CSCD
北大核心
2008年第10期1719-1721,共3页
Journal of Engineering Thermophysics
基金
国家自然科学基金面上项目资助(No．50376025)
关键词
温度
漂移速度
迁移率
temperature
drift velocity
mobility
