摘要
大功率应用需要具有低功耗、高可靠性的高压IGBT(HVIGBT)模块。然而这些特性通常是相互制约的,为达到均衡的性能,三菱电机开发出一种精细平面型MOS栅轻穿通HVIGBT(FP-LPT-HVIGBT)与具有高短路承受能力的软反向恢复高压二极管(SR-HVDi)组合的新型结构。采用这种新硅片组合的新一代3.3kV HVIGBT模块能在降低功率损耗的同时提高额定电流。
A high voltage IGBT （HVIGBT） module with high performance such as low power loss and high reliability is required for high power applications.However,these performances often are in a reciprocal relationship with each other. Thus,in order to achieve a balancing performance,a newly developed chip-set adopts fine planar MOS-gate Light punch through HVIGBT （FP-LPT-HVIGBT） and soft reverse recovery HV-Diode with high robustness （SR-HVDi） structure as advanced design.The new generation 3.3 kV HVIGBT modules can reduce the power loss and increase the rated current by utilizing this improved new chip-set performances.
出处
《电力电子技术》
CSCD
北大核心
2008年第9期76-78,共3页
Power Electronics
