用基体调谐的fr磁控管溅射获得离子辅助沉积薄膜
-
1马兵.磁控管溅射的最新进展[J].等离子体应用技术快报,2000(1):1-4.
-
2甘德昌.直流反应磁控管溅射产生的氮化钛薄膜沉积及其性质[J].等离子体应用技术快报,1996(3):17-18.
-
3王惠三.磁控管溅射技术的新近进展[J].等离子体应用技术快报,1998(11):1-4.
-
4丁芃,刘发民,杨新安,李建奇.Preparation,structure and ferromagnetic properties of the nanocrystalline Ti_(1-x)Mn_xO_2 thin films grown by radio frequency magnetron co-sputtering[J].Chinese Physics B,2008,17(2):721-725. 被引量:1
-
5马兵.高速率沉积AlN薄膜的磁控管溅射系统稳定性[J].等离子体应用技术快报,2000(2):19-20.
-
6王学进,梁春军,管康萍,李德华,聂玉昕,朱世秋,黄峰,张葳葳,成正维.Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron sputtering[J].Chinese Physics B,2008,17(9):3512-3515. 被引量:2
-
7FengShimeng,CuiMingqi,等.Reflective performance of W/Si multilayer at the photon energy of 700eV and 1200eV[J].Beijing Synchrotron Radiation Facility,2001(1):152-157.
-
8用磁控管溅射技术控制氧化铟锡薄膜的特性[J].等离子体应用技术快报,2000(12):24-24.
-
9胡远荣,王丽阁,李国卿.Electrochromic Properties of Sputtered Ti-Doped WOa Films[J].Plasma Science and Technology,2007,9(4):452-455. 被引量:1
-
10硼/氮共掺杂可使金属单壁碳纳米管转变成半导体[J].科学通报,2009,54(3):396-396.
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