摘要
本文从理论上首次计算了含卤素体系中生长金刚石薄膜的三元相图，研究了碳－氢－氟（C－H－F）体系中金刚石生长区随衬底温度及氟含量的变化趋势．与实验比较，符合较好。计算结果表明C－H－F体系的三元相图中金刚石生长区的位置和变化趋势与碳－氢－氧（C－H－O）体系中的有明显的差别，特别是当气相中氟含量超过氢含量时，金刚石生长区趋于消失。理论计算的相图可用于优化含氟体系生长金刚石的实验条件如碳氢氟的组份和衬底温度等。
Ternary phase diagrams for low pressure diamond synthesis in carbon-hy-drogen-fluorine (C-H-F) system are first calculated. There are diamond growth region in these phase diagrams. The change trend of diamond growth region with substrate temperature and fluorine addition are studied. Our theoretical calculations agree well with reported experimental results. There is obvious difference in the change trend of diamond growth region between C-H-F and C-H-O system. Typically, diamond growth region vanishes while the ratio λ is near or great than 0. 5. The diamond growth region in these phase diagrams allows general predictions of gas phase compositions and starting materials suitable for diamond synthesis with fluorine addition.
出处
《微细加工技术》
EI
1997年第4期43-48,共6页
Microfabrication Technology
基金
国家自然科学基金
"八六三"高科技基金
