摘要
The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower temperature is reported. The effect of silicon on the carbothermal reduction process has been investigated in detail. Compared with traditional reduction, the introduction of silicon can change the reaction path and further increase the conversion of silicon carbide at a lower temperature. It is considered that the assistant reduction consists of three steps： vaporizing and melting of silicon, formation of silicon monoxide, and synthesis of silicon carbide. The morphology of the synthesized SiC powders through the silicon assistant method can be affected apparently by the experimental temperature.
The silicon assistant method to increase the reaction yield of carbothermal reduction of silica at a lower temperature is reported. The effect of silicon on the carbothermal reduction process has been investigated in detail. Compared with traditional reduction, the introduction of silicon can change the reaction path and further increase the conversion of silicon carbide at a lower temperature. It is considered that the assistant reduction consists of three steps： vaporizing and melting of silicon, formation of silicon monoxide, and synthesis of silicon carbide. The morphology of the synthesized SiC powders through the silicon assistant method can be affected apparently by the experimental temperature.
